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New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications With Industry-Best Peak Output Power

New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications With Industry-Best Peak Out

NEUBIBERG, GERMANY -- (MARKET WIRE) -- 04/01/08 -- Infineon Technologies AG (FRANKFURT: IFX) (NYSE: IFX), a leading supplier of communication ICs and solutions, today announced two new LDMOS RF power transistors targeting wireless infrastructure applications, such as WiMAX, in the 2.5 GHz-to-2.7 GHz frequency band. These products, which provide peak output power of up to 170 W, extend Infineon's broad portfolio of RF power transistors for WiMAX applications, which currently includes 10 W, 45 W and 130 W devices. The high peak power performance of the new LDMOS RF power transistors will enable designers to simplify their RF power amplifier designs.

"With this addition to its comprehensive product portfolio, Infineon continues to offer the highest peak power RF power transistors in the market," said Helmut Volger, Vice President and General Manager for RF Power, Infineon Technologies. "As the wireless infrastructure market adopts WiMAX and other new technologies, such products as Infineon's LDMOS RF power transistors, with their enhanced features and capabilities, become a crucial element in a designer's tool kit. The higher peak power enables designers to develop a simpler design, and lowers the overall bill of materials."

Infineon's PTFA260851E/F 85W FET features 14 dB gain (typical) and 22 percent efficiency (typical) at 16 W average output power, under WiMAX signal conditions. The PTFA261702E 170W FET features 15 dB gain (typical) and 20 percent efficiency at 32 W average output power, under WiMAX signal conditions.

Infineon's PTFA261702E is rated at 170W (P-1 dB), the industry's highest peak output power in the 2.5 GHz-to-2.7 GHz band. The transistor's architecture provides electrically isolated halves that ease use in Doherty power amplifier applications. The device can also be used in a push-pull configuration for extended bandwidth performance.

Both products are available in lead-free, RoHS-compliant ceramic packages. Operating at 28 V, these transistors provide broadband internal matching, and are capable of handling a 10:1 VSWR (voltage standing wave ratio) at CW (continuous wave) power output and 28 V supply voltage.


Infineon's PTFA260851E/F and PTFA261702E are now in production. For pricing and more information, please contact [email protected] or call 1-877-465-3667 (GO LDMOS).

About Infineon

Infineon Technologies AG, Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, communications, and security. In the 2007 fiscal year (ending September), the company reported sales of Euro 7.7 billion (including Qimonda sales of Euro 3.6 billion) with approximately 43,000 employees worldwide (including approximately 13,500 Qimonda employees). With a global presence, Infineon operates through its subsidiaries in the U.S. from Milpitas, CA, in the Asia-Pacific region from Singapore, and in Japan from Tokyo. Infineon is listed on the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX).

Further information is available at www.infineon.com.

This news release is available online at www.infineon.com/press/.

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